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Low temperature growth of single crystalline germanium nanowires
Authors:LZ Pei  HS Zhao  HY Yu  JF Wang  J Chen
Affiliation:a School of Materials Science and Engineering, Institute of Molecular Engineering and Applied Chemistry, Key Lab of Materials Science and Processing of Anhui Province, Anhui University of Technology, Ma’anshan, Anhui 243002, PR China
b Henkel Huawei Electronics Co. Ltd., Lian’yungang, Jiangsu 222006, PR China
c Department of Materials Science, Fudan University, Shanghai 200433, PR China
Abstract:Ge nanowires have been prepared at a low temperature by a simple hydrothermal deposition process using Ge and GeO2 powders as the starting materials. These as-prepared Ge nanowires are single crystalline with the diameter ranging from 150 nm to 600 nm and length of several dozens of micrometers. The photoluminescence spectrum under excitation at 330 nm shows a strong blue light emission at 441 nm. The results of the pressure and GeO2 content dependences on the formation and growth of Ge nanowires show that the hydrothermal pressure and GeO2 content play an essential role on the formation and growth of Ge nanowires under hydrothermal deposition conditions. The growth of Ge nanowires is proposed as a solid state growth mechanism.
Keywords:A  Nanostructures  B  Crystal growth  C  Electron microscopy  D  Optical properties
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