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| 基于氧化铪的高k栅介质纳米MOSFET栅电流模型 | |
| 引用本文： | 王伟,孙建平,顾宁.基于氧化铪的高k栅介质纳米MOSFET栅电流模型[J].固体电子学研究与进展,2006,26(4):436-439,444. |
| 作者姓名： | 王伟 孙建平 顾宁 |
| 作者单位： | 1. 东南大学分子与生物分子电子学教育部重点实验室,南京,210096;南京邮电大学光电工程学院,南京,210003 2. 美国密西根大学电气工程和计算机科学系 3. 东南大学分子与生物分子电子学教育部重点实验室,南京,210096 |
| 摘 要： | 运用一种全量子模型研究基于氧化铪的高k栅介质纳米MOSFET栅电流,该方法特别适用于高k栅介质纳米MOS器件,还能用于多层高k栅介质纳米MOS器件。使用该方法研究了基于氧化铪高k介质氮含量等元素对栅极电流的影响。结果显示,为最大限度减少MOS器件的栅电流,需要优化介质中氮含量、铝含量。 |
| 关 键 词： | 高k 栅电流 量子模型 |
| 文章编号： | 1000-3819（2006）04-436-04 |
| 收稿时间： | 2006-01-09 |
| 修稿时间： | 2006-01-092006-02-24 |
Modeling of Tunneling Current Through Hf-based Dielectric Films for Nanoscale MOSFET |
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| WANG Wei,SUN Jianping,GU Ning.Modeling of Tunneling Current Through Hf-based Dielectric Films for Nanoscale MOSFET[J].Research & Progress of Solid State Electronics,2006,26(4):436-439,444. | |
| Authors: | WANG Wei SUN Jianping GU Ning |
| Affiliation: | 1.National Lab. of Molecular and Biomolecular Electronics, Southeast University, Nanjing,210096,CHN;2.College of Opto-electronic Engineering, Nanjing University of Posts and Telecommunications,Nanjing 210096, CHN;3.Department of Electrical Engineering and Computer Science, University of Michigan,USA |
| Abstract: | We use a quantum-mechanical model to study the gate tunneling current of Hfbased dielectric films for nanoscale MOSFET. The present approach is capable of modeling highk stack structures consisting of multiple layers of different dielectrics. Effects of nitrogen content and other element contents on the gate tunneling current have been studied theoretically. Our results show that the reduction of the gate tunneling current can be optimized in terms of the nitrogen content and aluminum content. |
| Keywords: | High-k gate current quantum-mechanical model |
| 本文献已被 CNKI 维普 万方数据 等数据库收录！ | |