Ferromagnetic Properties of Five-Period InGaMnAs/GaAs Quantum Well Structure |
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Authors: | Young H Kwon Sejoon Lee Woochul Yang Chang-Soo Park Im Taek Yoon |
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Affiliation: | 1.Quantum Functional Semiconductor Research Center,Dongguk University,Seoul,Korea;2.Department of Physics and Semiconductor Science,Dongguk University,Seoul,Korea;3.Department of Physics and Quantum-Function Research Laboratory,Hanyang University,Seoul,Korea |
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Abstract: | The effect of Mn was investigated in a synthesized multilayer system made up of five layers of InMnGaAs/GaAs quantum well (QW) grown on semi-insulating (100)-oriented substrates prepared by low-temperature molecular beam epitaxy. Magnetic moment measurements on a superconducting quantum interference device magnetometer revealed the presence of ferromagnetism with a Curie temperature above room temperature in a five-layer InGaMnAs/GaAs QW structure in a GaAs matrix. X-ray diffraction and secondary ion mass spectroscopy measurements powerfully confirmed the second phase founding of ferromagnetic GaMn and MnAs clusters. The ferromagnetism existing in five layers of InMnGaAs/GaAs QW is not intrinsic, but extrinsic due to the presence of Mn dopant clusters such as GaMn and MnAs clusters. |
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