| 缓冲层对多量子阱材料GaAs/Ga_(1-x)Al_xAs共振态的影响 |
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| 引用本文： | 杨晓峰. 缓冲层对多量子阱材料GaAs/Ga_(1-x)Al_xAs共振态的影响[J]. 微纳电子技术, 2003, 0(Z1) |
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| 作者姓名： | 杨晓峰 |
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| 作者单位： | 华北工学院理学系 山西太原030051 |
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| 摘 要： | 从理论上研究缓冲层的厚度和特性对多量子阱材料 (GaAs/Ga1-xAlxAs)中的共振态的影响 ,利用界面响应理论的格林函数方法 ,计算了局域和总电子态密度以及电子对结的穿透率 ,展示了缓冲层特性对态密度特征峰、穿透率的影响。结果表明 ,缓冲层具有控制共振隧穿电子和影响系统电子态的作用
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| 关 键 词： | 缓冲层 共振态 态密度 |
Effect of buffer layer on resonant states in material GaAs/Ga_(1-x)Al_xAs |
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| YANG Xiao feng. Effect of buffer layer on resonant states in material GaAs/Ga_(1-x)Al_xAs[J]. Micronanoelectronic Technology, 2003, 0(Z1) |
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| Authors: | YANG Xiao feng |
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| Abstract: | The effect of the thickness and barrier height of buffer layers on resonant states in a MQW is studied theoretically. The local and total density of states as well as electronic transmission rate are calculated by using Green function method in the frame work of interface response theory. We showed that effect of buffer layer on the density of states and electronic tunnelling rate are prominent. |
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| Keywords: | buffer layer resonant state density of state |
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