Promotion of practical SIMOX technology by the development of a 100 mA-class high-current oxygen implanter |
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| Authors: | Izumi K Omura Y Nakashima S |
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| Affiliation: | NTT Electrical Communications Laboratories, Atsugi Laboratories, Atsugi, Japan; |
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| Abstract: | A high-current oxygen implanter which has an acceleration energy of 200 keV and a beam current of 100 mA has been developed. This implanter has been used to form SIMOX wafers, on which p- and n-channel MOSFETs have been fabricated on a trial basis. Good electrical characteristics have been achieved with these MOSFETs. It has been shown that a 100 mA-class high-current oxygen implanter can promote SIMOX technology in a practical way. |
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