基于iOS的高速存储电路设计与实现

为了解决iOS移动设备外部存储器件传输速度及存储容量的问题,设计了一套适用iOS的外设高速存储电路。通过采用兼容USB2.0的数据高速传输和处理技术USB3.1标准,以提高传输速度;使用Flash Raid技术进行读写管理,将NAND和eMMC Flash芯片的数据并行传输和管理技术进行集成,实现双Flash芯片同步读写的双通道数据高速传输与存储,并内置多种容错机制。实验结果表明,重新设计的高速存储电路可适应和扩展外设存储容量,还可提升读写速度,其在iOS端的读写速度达到25, 16 MB/s,实现了iOS移动设备外部存储高速传输与存储目的。

A Design and Its Implementation of High-Speed Memory Circuit Based on iOS

In view of the deficiency found in the transmission speed and storage capacity of the external storage device of iOS mobile devices, a set of peripheral high-speed memory circuits suitable for iOS has been designed. By adopting the high-speed data transmission processing technology that meets USB3.1 standard requirement, which is also compatible with USB 2.0 standard, the transmission speed can be improved. Flash Raid management technology is to be applied for the integration of NAND and eMMC Flash chip data parallel transmission management, thus realizing the high-speed transmission and storage of dual-channel data with dual Flash chips reading and writing synchronously, as well as built-in multiple fault-tolerant mechanisms. The experimental results show that the redesigned high-speed storage circuit can adapt and expand the peripheral storage capacity, and improve the speed of speaking, reading and writing on the iOS terminal, with a speed as high as 25, 16 MB/s, thus achieving the purpose of high-speed transmission and storage of external storage in iOS mobile devices.