| SiC/GaN IMPATT二极管的交流性能研究 |
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| 引用本文： | 戴扬,叶青松,党江涛,卢昭阳,张为伟,雷晓艺,张云尧,廖晨光,赵胜雷,赵武. SiC/GaN IMPATT二极管的交流性能研究[J]. 微电子学, 2022, 52(1): 125-131 |
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| 作者姓名： | 戴扬 叶青松 党江涛 卢昭阳 张为伟 雷晓艺 张云尧 廖晨光 赵胜雷 赵武 |
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| 作者单位： | 西北大学 信息科学与技术学院, 西安 710127;上海精密计量测试研究所, 上海 201109;西安电子科技大学 微电子学院, 西安 710071 |
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| 基金项目： | 国家自然科学基金资助项目(61804125,62001382,62004163) |
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| 摘 要： | 利用p型宽带隙材料SiC替代p型GaN,制作了一种p-SiC/n-GaN异质结双漂移(DDR)IMPATT二极管.对器件的交流大信号输出特性进行数值模拟仿真.结果表明,相比传统GaN单漂移(SDR)IMAPTT二极管,p-SiC/n-GaN新结构DDR器件的击穿电压、最佳负电导、交流功率密度和直流-交流转换效率都获得了...
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| 关 键 词： | 双漂移 异质结 碳化硅 氮化镓 IMPATT二极管 |
| 收稿时间： | 2021-06-25 |
Study on RF Performance of SiC/GaN IMPATT Diode |
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| DAI Yang,YE Qingsong,DANG Jiangtao,LU Zhaoyang,ZHANG Weiwei,LEI Xiaoyi,ZHANG Yunyao,LIAO Chenguang,ZHAO Shenglei,ZHAO Wu. Study on RF Performance of SiC/GaN IMPATT Diode[J]. Microelectronics, 2022, 52(1): 125-131 |
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| Authors: | DAI Yang YE Qingsong DANG Jiangtao LU Zhaoyang ZHANG Weiwei LEI Xiaoyi ZHANG Yunyao LIAO Chenguang ZHAO Shenglei ZHAO Wu |
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| Abstract: | A p-SiC/n-GaN heterojunction double drift (DDR) IMPATT diode was fabricated while p-GaN was replaced by wide bandgap p-SiC. The output characteristics of AC large signal were simulated numerically. The results showed that compared with the traditional GaN single drift (SDR) IMAPTT diode, the breakdown voltage, optimal negative conductance, AC power density and DC-AC conversion efficiency of the new p-SiC/N-GaN DDR device were significantly improved, and the device had a wider oscillation frequency band. The new structure of the device had significant application potential in AC power density, which reached 1.97 MW/cm2. The diode was based on the wide gap semiconductor material, which provided reference value for the design and manufacture of GaN and SiC IMPATT device. |
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