高功率纳秒级激光二极管高侧驱动电路

纳秒级高功率的激光发射系统对激光雷达的探测性能产生重要影响。本文对普遍使用的激光二极管低侧栅极驱动电路进行修改得到高侧栅极驱动方式，使之能够适用于共阴极激光发射电路。该高侧驱动方式采用了一个半桥驱动器，两个GaN FET作为核心器件来控制激光二极管的发光。文中分析了该拓扑结构中电压、电容、电阻、电感等因素对流经激光器电流波形的影响。经过实验测试，在高重复频率下该电路能够产生3.1 ns脉冲宽度，约65 W的峰值功率，能够作为激光雷达的发射模块对场景进行扫描成像。

High side drive circuit for high power nanosecond laser diode

The nanosecond high power laser emission system has an important impact on the detection performance of LIDAR.In this paper,the commonly used low side gate drive is modified to obtain a high side gate drive method,making it suitable for common cathode laser emission circuits.And the high side drive method utilizes a half bridge driver with two GaNFETs as core devices to control the light emission of the laser diode.The effects of voltage,capacitance,resistance,and inductance on the current waveform flowing through the laser are analyzed in this topology.After experimental testing,the circuit is capable of generating a pulse width of 3.1 ns and a peak power of approximately 65 W at high repetition rates,which can be used as a transmitter module for LIDAR to scan and image scenes.