锗硅异质结双极器件单粒子效应与加固技术研究进展

锗硅异质结双极晶体管(Silicon-Germanium Heterojunction Bipolar Transistors, SiGe HBT)具有高速、高增益、低噪声、易集成等多种优势,广泛应用于高性能模拟与混合信号集成电路。同时,基区能带工程带来的优异低温特性以及良好的抗总剂量、抗位移损伤能力使其拥有巨大的空间极端环境应用潜力。然而,SiGe HBT固有的器件结构使其对单粒子效应极为敏感,并严重制约了SiGe电路综合抗辐射能力的提升。针对上述问题,综述了SiGe HBT单粒子效应及加固技术的研究进展,详细阐述了SiGe HBT单粒子效应的基本原理,分析了影响单粒子效应敏感性的关键因素,并对比了典型加固方法取得的效果,从而为抗辐射SiGe工艺开发和电路设计提供参考。

Advances in Single Event Effects and Hardening Techniques of Silicon-Germanium Heterojunction Bipolar Transistors

Silicon-Germanium heterojunction bipolar transistor (SiGe HBT) is widely used in high-performance analog and mixed-signal integrated circuits because of its high speed, high current gain, low noise abilities and easy integration with silicon-based platforms. Moreover, the superior cryogenic performance and good tolerance to total ionizing dose (TID) and displacement damage (DD) effects make SiGe HBT a competitive candidate as extreme environment electronics for space applications. However, the inherent device structure of SiGe HBT makes it very sensitive to single event effect (SEE), which seriously restricts the overall improvement of the radiation hardening ability of SiGe circuits. This paper introduces the advances in single event effects and hardening techniques of SiGe HBT. The basic mechanisms of single event charge collection and the key factors influencing the SEE sensitivity of SiGe HBT are discussed in detail. The effectiveness of typical hardening techniques are also compared, thus providing clues for the design of radiation hardened SiGe processes and integrated circuits.