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面向功率器件封装的纳米铜烧结连接技术研究进展
引用本文:马立民,鲁子怡,贾强,王乙舒,张宏强,周炜,邹贵生,郭福. 面向功率器件封装的纳米铜烧结连接技术研究进展[J]. 稀有金属材料与工程, 2024, 53(1): 296-320
作者姓名:马立民  鲁子怡  贾强  王乙舒  张宏强  周炜  邹贵生  郭福
作者单位:北京工业大学,北京工业大学,北京工业大学,北京工业大学,北京航空航天大学,北京工业大学,清华大学,北京工业大学
基金项目:国家自然科学(No.52205324),北京市教委-市基金联合资助项目(No.KZ202210005005),国家自然科学(No.52075287)
摘    要:随着第三代半导体SiC和GaN的快速发展,传统的Si基器件用封装材料已不能满足功率器件在高功率密度和高温环境下可靠服役的需求。纳米铜烧结连接技术不仅能够低温连接、高温服役,同时具有优异的导热、导电性能和相对于纳米银较低的成本,在功率器件封装研究领域备受关注,纳米铜焊膏成为最有潜力的耐高温封装互连材料之一。本文从纳米铜焊膏的制备、影响烧结连接接头性能的因素以及接头的可靠性3个方面综述了当前纳米铜烧结连接技术的研究进展,阐明了纳米铜颗粒的氧化行为及对应措施,并重点论述了纳米铜烧结连接接头的高温服役可靠性与失效机理,旨在促进低成本的纳米铜烧结连接技术在高性能、高可靠功率器件封装中的应用。

关 键 词:功率器件  第三代半导体  芯片封装  纳米铜颗粒  低温烧结连接  可靠性
收稿时间:2023-03-31
修稿时间:2023-06-12

Research Progress of Cu Nanoparticle Sintering Technology for Power Electronic Packaging
Ma Limin,Lu Ziyi,Jia Qiang,Wang Yishu,Zhang Hongqiang,Zhou Wei,Zou Guisheng and Guo Fu. Research Progress of Cu Nanoparticle Sintering Technology for Power Electronic Packaging[J]. Rare Metal Materials and Engineering, 2024, 53(1): 296-320
Authors:Ma Limin  Lu Ziyi  Jia Qiang  Wang Yishu  Zhang Hongqiang  Zhou Wei  Zou Guisheng  Guo Fu
Affiliation:Faculty of Materials and Manufacturing,Beijing University of Technology,Faculty of Materials and Manufacturing,Beijing University of Technology,Faculty of Materials and Manufacturing,Beijing University of Technology,Faculty of Materials and Manufacturing,Beijing University of Technology,,Faculty of Materials and Manufacturing,Beijing University of Technology,Department of Mechanical Engineering,Tsinghua University,Faculty of Materials and Manufacturing,Beijing University of Technology
Abstract:With the rapid development of the third-generation semiconductors SiC and GaN, traditional packaging materials such as Si-based lead-free solder cannot satisfied the requirements of high-power density and high-temperature loadings in power electronic devices any more. Nowadays, the joints packaged by Cu nanoparticle sintering technology could not only be bonded at low-temperature and serving at high-temperature, but also exhibit excellent thermal conductivity, electrical conductivity and relatively lower cost comparing to Ag nanoparticles. Thus, more and more attentions has been attracted in the field of Cu nanoparticle sintering technology using in power electronic packaging, which makes Cu nanoparticles become one of the most potential high-temperature-resistant packaging and interconnection materials. In this work, the current research progress of Cu nanoparticle sintered technology was summarized, including the fabrication of Cu nanoparticle pastes, the factors affecting the performance of sintered joints and the reliability of joints. Meanwhile, the oxidation behaviors as well as the anti-oxidation methods of Cu nanoparticle were introduced. Also, the high-temperature working reliability and failure mechanism of Cu nanoparticle sintered joints were discussed. This review was aimed at promoting the application of low-cost Cu nanoparticle sintering technology for high-performance and high-reliability power electronic packaging.
Keywords:power electronic devices   third-generation semiconductor   chips packaging   Cu nanoparticle   low-temperature sintering   reliability
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