A monolithic 3.1-4.8 GHz MB-OFDM UWB transceiver in 0.18-μm CMOS |
| |
引用本文: | 郑仁亮,江旭东,姚望,杨光,尹江伟,郑剑钦,任俊彦,李巍,李宁.A monolithic 3.1-4.8 GHz MB-OFDM UWB transceiver in 0.18-μm CMOS[J].半导体学报,2010(6):109-117. |
| |
作者姓名: | 郑仁亮 江旭东 姚望 杨光 尹江伟 郑剑钦 任俊彦 李巍 李宁 |
| |
基金项目: | Project supported by the National Hi-Tech R&D Program of China(No.2009AA01Z261); the National Defense R&D Program of China (No.51308020403); the Shanghai IC Design Special Project China(No.08706200700). |
| |
摘 要: | 正A monolithic RF transceiver for an MB-OFDM UWB system in 3.1-4.8 GHz is presented.The transceiver adopts direct-conversion architecture and integrates all building blocks including a gain controllable wideband LNA,a I/Q merged quadrature mixer,a fifth-order Gm-C bi-quad Chebyshev LPF/VGA,a fast-settling frequency synthesizer with a poly-phase filter,a linear broadband up-conversion quadrature modulator,an active D2S converter and a variablegain power amplifier.The ESD protected transceiver is fabricated in Jazz Semiconductor's 0.18-μm RF CMOS with an area of 6.1 mm~2 and draws a total current of 221 mAfrom 1.8-V supply.The receiver achieves a maximum voltage gain of 68 dB with a control range of 42 dB in 6 dB/step,noise figures of 5.5-8.8 dB for three sub-bands,and an inband /out-band IIP_3 better than-4 dBm/+9 dBm.The transmitter achieves an output power ranging from-10.7 to-3 dBm with gain control,an output P_(1dB) better than-7.7 dBm,a sideband rejection about 32.4 dBc,and LO suppression of 31.1 dBc.The hopping time among sub-bands is less than 2.05 ns.
|
关 键 词: | CMOS OFDM 收发器 单片 微米 千兆赫 UWB 宽带低噪声放大器 |
本文献已被 CNKI 维普 等数据库收录! |
| 点击此处可从《半导体学报》浏览原始摘要信息 |
|
点击此处可从《半导体学报》下载全文 |
|