Growth of thick gan films on rf sputtered ain buffer layer by hydride vapor phase epitaxy |
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Authors: | Heon Lee Masaaki Yuri Tetsuzo Ueda James S. Harris Kyusik Sin |
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Affiliation: | (1) Solid State Electronics Laboratory, Stanford University, 94305 Stanford, CA;(2) Bell Laboratories, Lucent Technologies, 600 Mountain Avenue, 08817 Murray Hill, NJ;(3) Department of Materials Science and Engineering, Stanford University, 94305 Stanford, CA |
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Abstract: | High crystalline quality thick GaN films were grown by vapor phase epitaxy using GaCl3 and NH3. The growth rate was in the range of 10~15 Μm/h. GaN films grown at higher temperatures (960~ 1020?C) were single crystalline with smooth surface morphologies. No chlorine impurity was incorporated in these films during growth. The best crystalline quality and surface morphology of grown films was achieved by sputtering a thin A1N buffer layer, prior to growth. According to reflection high energy electron diffraction and atomic force microscopy measurements, as-sputtered A1N buffer layer was amorphous with root means square roughness of 0.395 nm and then crystallized during the GaN growth. This improved the GaN growth due to more uniform distribution of GaN nucleation. Rutherford backscattering channeling experiments produced the lowest value from the GaN film grown on a-Al2O3 with a 500å A1N buffer layer at 1020?C. |
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Keywords: | A1N buffer layer GaCl3 GaN film hydride vapor phase epitaxy (HVPE) minimum RBS channeling NH3 Rutherford backscattering spectroscopy (RBS) |
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