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Zinc diffusion in AlxGa1−xP
Authors:Hans P. Kleinknecht  Alois E. Widmer
Affiliation:

Laboratories RCA Ltd., Badenerstrasse 569, CH-8048, Zürich, Switzerland

Abstract:We report about Zn diffusion experiments at 700–850°C in (AlGa)P hetero-structures grown by liquid-phase epitaxy. The effective diffusion constant Al0.35Ga0.65P is found to be 10–50 times larger than in GaP and has a smaller activation energy. We discuss the implication of this for device work and give a tentative explanation.
Keywords:
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