| 电化学法预处理硅基片提高金刚石成核密度的研究 |
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| 引用本文： | 沈明荣,汪浩,宁兆元,叶超,甘肇强,任兆杏.电化学法预处理硅基片提高金刚石成核密度的研究[J].功能材料,1997(5). |
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| 作者姓名： | 沈明荣 汪浩 宁兆元 叶超 甘肇强 任兆杏 |
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| 作者单位： | 苏州大学物理系，中科院等离子体所 |
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| 摘 要： | 通过用电化学法预先沉积一层碳膜的方法，利用热丝化学汽相沉积法使金刚石在光滑硅片上的成核密度达到１０７ｃｍ－２左右，与未镀碳膜相比提高了近３个数量级。文中还分析了可能的原因。
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| 关 键 词： | 金刚石膜 碳膜 电化学法 成核密度 |
Enhanced Diamond Nucleation on Electrolysis Pretreated Silicon Substrate |
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| Shen Mingrong,Wang Hao,Ning Zhaoyuan,Ye Chao,Gan Zhaoqiang,Ren Zhaoxing.Enhanced Diamond Nucleation on Electrolysis Pretreated Silicon Substrate[J].Journal of Functional Materials,1997(5). |
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| Authors: | Shen Mingrong Wang Hao Ning Zhaoyuan Ye Chao Gan Zhaoqiang Ren Zhaoxing |
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| Abstract: | Predepositing a carbon film by electrolysis technique, the enhanced diamond nucleation (about 10 7 cm 2 ) on smooth silicon substrate was achieved. The nucleation density was three orders higher than it on smooth silicon substrate with no pretreatment. Possible reasons were given for the high diamond nucleation density on the carbon film. |
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| Keywords: | diamond film carbon film electrolysis technique nucleation density |
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