Realization of novel low-loss monolithically integrated passive waveguide mode converters

The novel design and fabrication of monolithically integrated passive waveguide mode converters (WMCs), realized through the utilization of the reactive ion-etch lag (RIE Lag) phenomenon, is reported. The low-loss GaAs-AlGaAs WMCs have been characterized over a wavelength range of 900-940 nm, resulting in TE-TM (TM-TE) mode conversion with efficiencies of greater than 96% and low-loss devices with conversion lengths as short as 150 /spl mu/m. The properties and characteristics of the fully integrated WMCs, fabricated with a single masking and etch process, are in agreement with theoretical predictions.