氢离子注入法提高InAsP/InP应变多量子阱发光特性

采用气态源分子束外延系统生长了InAsP/InP应变多量子阱,研究了H 注入对量子阱光致发光谱的影响以及高温快速退火对离子注入后的量子阱发光谱的影响.发现采用较低H 注入能量(剂量)时,量子阱发光强度得到增强;随着H 注入能量(剂量)的增大,量子阱发光强度随之减小.H 注入过程中,部分隧穿H 会湮灭掉量子阱结构界面缺陷,同时H 也会对量子阱结构带来损伤,两者的竞争影响量子阱发光强度的变化.高温快速退火处理后,离子注入后的量子阱样品发光峰位在低温10K相对于未注入样品发生蓝移,蓝移量随着H 注入能量或剂量的增大而增加.退火过程中缺陷扩散以及缺陷扩散导致的阱层和垒层之间不同元素互混是量子阱发光峰位蓝移的原因.

ENHANCING THE PHOTOLUMINESCENCE OF InAsP/InP STRAINED MULTIPLE QUANTUM WELLS BY H IONS IMPLANTATION

InAsP/InP strained multiple quantum wells (SMQWs) were grown by gas source molecular beam epitaxy (GSMBE).The effects of H+ ions implantation on the photoluminescence (PL) of InAsP/InP SMQWs and the effects of rapid thermal annealing (RTA) on the PL of implanted InAsP/InP SMQWs were investigated.Our results show that the quantum wells (QWs) PL intensities increase under lower H+ ions implantation energies (doses) and the QWs PL intensities decrease with the rise of implantation energies (doses).During the implantation process,some tunnelling H+ ions annihilate the interface defects inside the QWs and some H+ ions introduce some damage into the QWs structure.The competition between these two processes influences the QWs PL intensities.After RTA,the implanted QWs PL peak positions are blue shifted compared with that of as-grown sample at low temperature 10K and the quantity of blue shift increases with the rise of implantation energies (doses).It is attributed to the defects diffusion and the intermixing of different elements between the well layer and the barrier layer during RTA.