Vertical-cavity surface-emitting laser diodes at 1.55 μm withlarge output power and high operation temperature |
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| Authors: | Shau R. Ortsiefer M. Rosskopf J. Bohm G. Kohler F. Amann M.-C. |
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| Affiliation: | Walter Schottky Inst., Tech. Univ. Munchen, Garching; |
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| Abstract: | Improved 1.55 μm InGaAlAs/InP vertical-cavity surface-emitting lasers were fabricated in the buried tunnel junction technology yielding sub-mA threshold currents, 0.9 V threshold voltage, 10-40 Ω series resistance, output power up to 7 mW (20°C, CW) and CW operation up to >110°C |
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