Electrodeposition of CuInSe2 layers using a two-electrode system for applications in multi-layer graded bandgap solar cells

In order to develop low-cost, large area multi-layer graded bandgap solar cell structures, CuInSe₂ layers were grown using a simplified two-electrode system. Atomic force microscopy (AFM) shows the layers grown consist of nano- and micro- size particles. Photoelectrochemical (PEC) cell, X-ray photoelectron spectroscopy (XPS) and X-ray fluorescence (XRF) measurements confirm that it is possible to grow CuInSe₂ layers with p-, i- and n-type electrical conduction, as pre-determined for applications in multi-layer device structures. XRF, XPS and PEC measurements show that Cu-richness provides p-type conduction and In-richness provides n-type conduction in electrodeposited CuInSe₂ layers. It is also possible to grow materials with different bandgaps in the range 1.00–1.90 eV. The combination of these two properties allows growth of multi-layer structures and preliminary work on these devices show good rectifying properties and exhibit photovoltaic activity. These new developments will be presented in this paper.