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Investigation of the implanted phosphorus in a boron doped SiGe epitaxial layer |
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| Authors: | R. Kinder,A. Vincze,R. Srná nek,B. Sopko |
| Affiliation: | a Department of Microelectronics (DM), Faculty of Electrical Engineering and Information Technology, Slovak Technical University, Ilkovi?ova 3, 812 19 Bratislava, Slovak Republic b International Laser Centre (ILC), Ilkovi?ova 3, 812 19 Bratislava, Slovak Republic c ON Semiconductor Slovakia (ON), a.s., Vrbovská cesta 2617/102, 921 01 Pieš?any, Slovak Republic d ATMEL Corporation (ATMEL), 1150 E. Cheyenne Mtn. Blvd., Colorado Springs, CO 80906, USA e Department of Physics, Faculty of Mechanical Engineering, Czech Technical University in Prague, Technická 4, 166 35 Praha 6, Czech Republic |
| Abstract: | Phosphorus diffusion into strained SiGe layers was studied by different methods. Doping profiles and carrier concentration profiles N(x), depth of pn junction, Ge content in SiGe and thickness of epitaxial layer were measured and simulated. Several experimental methods such as secondary ion mass spectroscopy, spreading resistance method, Raman spectroscopy—and process simulator ISE TCAD have been used. The results obtained by different methods and at different places of work have been compared and analysed. |
| Keywords: | SiGe Phosphorus Doping profile SIMS Spreading resistance DIOS |
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