Traps centers and deep defects contribution in current instabilities for AlGaN/GaN HEMT's on silicon and sapphire substrates |
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Authors: | N. Sghaier M. Trabelsi J.M. Bluet G. Guillot |
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Affiliation: | a Institut Préparatoire aux Etudes d'Ingénieurs de Nabeul (IPEIN), Campus universitaire El Merazka, 8000 Merazka, Nabeul, Tunisia b Laboratoire Physique de la Matière (UMR CNRS 5511), Institut National des Sciences Appliquées de Lyon, Bât. Blaise Pascal, 7 Avenue Jean Capelle, 69621 Villeurbanne Cedex, France c Institut d'Electronique et de Microélectronique du Nord (IEMN), Département hyperfréquences et Semiconducteurs, Université des Sciences et Technologies de Lille Cité Scientifique, Avenue Poincaré, 59652 Villeneuve d'Ascq Cedex, France |
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Abstract: | AlGaN/GaN high electron mobility transistors (HEMTs) with Si and Al2O3 substrates reveals anomalies on Ids-Vds-T and Igs-Vgs-T characteristics (degradation in drain current, kink effect, barrier height fluctuations, etc.). Stress and random telegraph signal (RTS) measurements prove the presence of trap centers responsible for drain current degradation. An explanation of the trapping mechanism responsible for current instabilities is proposed. Deep defects analysis performed by capacitance transient spectroscopy (C-DLTS), frequency dispersion of the output conductance (Gds(f)), respectively, on gate/source and drain/source contacts and RTS prove the presence of deep defects localized, respectively, in the gate and in the channel regions. Defects detected by C-DLTS and Gds(f) are strongly correlated, respectively, to barrier height inhomogeneities and kink anomalies. Gate current analysis confirms the presence of (G-R) centers acting like traps at the interface GaN/AlGaN. Finally, the localization of these traps defects is proposed. |
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Keywords: | AlGaN/GaN HEMT Current instabilities Defects Conductance dispersion Random telegraph signal |
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