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A semi empirical approach for submicron GaN MESFET using an accurate velocity field relationship for high power applications |
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| Authors: | Sneha Kabra Ritesh Gupta Mridula Gupta |
| Affiliation: | a Semiconductor Device Research Laboratory, Department of Electronic Science, University of Delhi, South Campus, Benito Juarez Road, New Delhi 110 021, India b Department of Physics, Motilal Nehru College, University of Delhi, South Campus, New Delhi 110 021, India |
| Abstract: | A semi empirical model has been proposed for sub-micron GaN MESFET's to calculate the I-V characteristics using an accurate velocity-field relationship obtained by fitting it with the Monte Carlo (MC) simulation. The results so obtained are compared with the experimental results to validate our model and are also compared with the results obtained from the simple saturation model to present the influence of electron drift velocity modeling on the device parameters. The model has been extended to predict the microwave parameters such as transconductance and output conductance of the device. |
| Keywords: | GaN MESFET Velocity field relationship Wide band gap semiconductor |
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