Experimental investigation on nonlinearities of PIN photodiodes |
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| Authors: | Yanli Zhao |
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| Affiliation: | a Department of Quantum Engineering, Graduate School of Engineering, Nagoya University, Furo-cho, 464-8603 Nagoya, Japan
b Venture Business Laboratory, Nagoya University, Furo-cho, 464-8603 Nagoya, Japan |
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| Abstract: | In this report, we experimentally investigate nonlinearity of PIN photodiode as a function of incident light power with different bias. It is found that the nonlinearity can be related with effective resistance of this device itself. According to ambipolar diffusion model, the resistance is divided into two parts, i.e. intrinsic region resistance and series resistance originating from non-Ohmic contact. Forward Current (If)-Voltage(Vf) plots indicate that fabrication of high-quality Ohmic contact is necessary to improve linear performance for PIN photodiodes. |
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| Keywords: | 73.40.Kp 73.40.Cg 72.20.Ht 78.66.Fd |
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