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Potentialities of substrate-thinning technique to control minority carrier injection in smart power IC's |
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| Authors: | C. Lochot,J.P. Lainé ,M. Bafleur |
| Affiliation: | a Technology Solutions Organization, Freescale Semiconductor, 134 Avenue du Général Eisenhower, 31023 Toulouse Cedex, France b LAAS/CNRS, 7 Avenue du Colonel Roche, 31077 Toulouse Cedex 4, France c Philips Semiconductor, Zurich, Switzerland |
| Abstract: | This paper deals with the evaluation of a substrate-thinning technique as a way to control the substrate current issues. A test structure has been realized on a Smart Power Technology. Comprehension of the phenomena has been validated thanks to TCAD simulation. This technique was then applied to a commercial IC and the authors show that they succeeded to reduce by one decade the collected current on a victim, although the IC has already been optimized with classical solutions. |
| Keywords: | Substrate-thinning technique Substrate current protection Smart power TCAD simulation |
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