Study on Mg memory effect in npn type AlGaN/GaN HBT structures grown by MOCVD |
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Authors: | Junxue Ran Xiaoliang Wang Guoxin Hu Junxi Wang Jianping Li Cuimei Wang Yiping Zeng Jinmin Li |
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Affiliation: | Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, People's Republic of China |
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Abstract: | AlGaN/GaN npn heterojunction bipolar transistor structures were grown by low-pressure MOCVD. Secondary ion mass spectroscopy (SIMS) measurements were carried out to study the Mg memory effect and redistribution in the emitter-base junction. The results indicated that there is a Mg-rich film formed in the ongrowing layer after the Cp2Mg source is switched off. The Mg-rich film can be confined in the base section by switching off the Cp2Mg source for appropriate time before the end of base growth. Low temperature growth of the undoped GaN spacer suppresses the Mg redistribution from Mg rich film. The delay rate of the Mg profile in sample C with spacer growing in low temperature is about 56 nm/decade, which becomes sharper than 80 nm/decade of the samples A and B without low temperature spacer. |
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Keywords: | GaN Mg memory effect Redistribution AlGaN/GaN HBTs MOCVD |
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