| 等离子增强化学汽相淀积a-SiC:H簿膜的AES研究 |
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| 引用本文： | 刘德中,罗兴华,张伟,王季陶. 等离子增强化学汽相淀积a-SiC:H簿膜的AES研究[J]. 半导体学报, 1989, 10(11): 859-864 |
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| 作者姓名： | 刘德中 罗兴华 张伟 王季陶 |
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| 作者单位： | 上海市测试技术研究所(刘德中，罗兴华)，复旦大学(张伟)，复旦大学(王季陶) |
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| 摘 要： | 用俄歇电子能谱(AES)对等离子增强化学汽相淀积(PECVD)氢化非晶碳化硅(a-SiC∶H)薄膜进行了组分的深度剖析、半定量分析以及化学分析.俄歇深度剖析曲线表明PECVD淀积的薄膜均匀性非常好;用俄歇半定量结果比较了薄膜成分同淀积工艺参量之间的一些关系;根据实验获得的Si LVV和CKLL俄歇谱比较和讨论了不同[Si]/[C]浓度比薄膜的化学特征.
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| 关 键 词： | PECVD a-SiC:H AES Si LVV俄歇谱 C KLL俄歇谱 |
AES Study of a-SiC:H Thin Films Formed by Plasma-Enhanced Chemical Vapor Deposition |
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| Liu Dezhong/. AES Study of a-SiC:H Thin Films Formed by Plasma-Enhanced Chemical Vapor Deposition[J]. Chinese Journal of Semiconductors, 1989, 10(11): 859-864 |
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| Authors: | Liu Dezhong/ |
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| Affiliation: | Liu Dezhong/Shanghai Institute of Testing TechnologyLuo Xinhua/Shanghai Institute of Testing TechnologyZhang Wei/Fudan UniversityWang Jitao/Fudan University |
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| Abstract: | The compositional depth profiles,semi-quantitative analysis and chemical analysis werecarried out by Auger Electron Spectroscopy (AES) of hydride amorphous silicon carbide (a-SiC:H),thin films formed by Plasma-Enhanced chemical Vapor Depostion (PECVD).Augerdepth profiles show an ideal homogeneity in the Films deposited by PECVD.The correlationbetween the film composition and the deposition parameters is compared by using Auger semi-quantitative results.The chemical properties of the thin films with cifferent [Si]/[C] ratiocsare compared and discussed on the basis of the experimental Si LVV and C KLL Auger Spec-trum. |
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| Keywords: | PECVD a-SiC:H AES Si LVV Auger spectra C KLL Auger |
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