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CdS quantum dot sensitized nanocrystalline Gd-doped TiO2 thin films for photoelectrochemical solar cells |
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| Authors: | A Ranjitha N Muthukumarasamy M Thambidurai Dhayalan Velauthapillai R Balasundaraprabhu S Agilan |
| Affiliation: | 1. Department of Physics, Coimbatore Institute of Technology, Coimbatore, India 2. Department of Electrical and Computer Engineering, Global Frontier Center for Multiscale Energy Systems, Seoul National University, Seoul, 151-744, Republic of Korea 3. Department of Engineering, University College of Bergen, Bergen, Norway 4. Department of Physics, PSG College of Technology, Coimbatore, India |
| Abstract: | CdS quantum dot sensitized Gd-doped TiO2 nanocrystalline thin films have been prepared by chemical method. X-ray diffraction analysis reveals that TiO2 and Gd-doped TiO2 nanocrystalline thin films are of anatase phase. The absorption spectra revealed that the absorption edge of CdS quantum dot sensitized Gd-doped TiO2 thin films shifted towards longer wavelength side (red shift) when compared to that of CdS quantum dot sensitized TiO2 films. CdS quantum dots with a size of 5 nm have been deposited onto Gd-doped TiO2 film surface by successive ionic layer adsorption and reaction method and the assembly of CdS quantum dot with Gd-doped TiO2 has been used as photo-electrode in quantum dot sensitized solar cells. CdS quantum dot sensitized Gd-doped TiO2 based solar cell exhibited a power conversion efficiency of 1.18 %, which is higher than that of CdS quantum dot sensitized TiO2 (0.91 %). |
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