Effect of irradiation with low-energy Ar ions on the characteristics of the working and rear sides of single-crystal GaAs substrate |
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| Authors: | A. S. Alalykin P. N. Krylov I. V. Fedotova A. B. Fedotov |
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| Affiliation: | (1) Udmurt State University, Krasnoarmeiskaya ul. 71, Izhevsk, 426034, Russia;(2) Nizhni Novgorod State Technical University, ul. Minina 24, Nizhni Novgorod, 603024, Russia |
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| Abstract: | Contactless methods were used to study the characteristics of the front and rear sides of single-crystal GaAs wafers whose rear side was irradiated with low-energy Ar ions. Variations in the optical and photoelectric properties of irradiated and unirradiated sides were detected. A solitonic mechanism for the penetration of defects into the crystal bulk is suggested. |
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