制备条件对Fe-Ta-N薄膜的结构和软磁性能的影响

应用射频磁控溅射法制备了Fe-Ta-N薄膜，系统地研究了制备工艺地Fe-Ta-N薄膜结构和软磁性能的影响，首先，制备了不同钽含量的薄膜，发现（Fe89.5Ta10.5）-N薄膜具有很好的软磁性能，氮分压P（N2）=5%时，矫顽力获得最小值，Hc=14A/m。此时，样品呈现纳米晶结构，晶粒尺寸D≤10∧-8m，并且，钽掺杂能抑制铁氮化合物的生成，使薄膜在高氮分压范围内具有高的饱和磁化强度，Ms=1242kA/m。其次，考察了热处理对（F89.5Ta10.5）-N薄膜结构和磁性能的影响，P(N2）=5%时，沉积态薄膜为非晶结构，矫顽力很大；在热处理过程中，薄膜逐渐晶化，400℃热处理后，晶化度达到40%，形成纳米晶结构，矫顽力迅速减小，最后，比较了不同溅射功率和总气压对（Fe89.5Ta10.5）-N薄膜结构和磁性能的影响，发现薄膜可在较大的溅射功率和总气压范围内保持优异的软磁性能，是非常适于工业生产的薄膜磁头材料。

The Influence of Preparing Condition on the Structure and Soft Magnetism of Fe-Ta-N Films

Fe-Ta-N films were prepared by RF magnetron sputtering． The dependence of structure and magnetic properties on fabrication condition were researched systematically． At first， the films with different Ta content are prepared． It is found that （Fe89.5Ta10.5）-N films have good soft magnetic properties at large range of nitrogen partial pressure． The addition of Ta holds back the formation of iron-nitride， so the films have high saturation magnetization， Mｓ＝1242kA／m．Next， the influence of annealing temperature on the structure and soft magnetic properties of （Fe89.5Ta10.5）-N films is researched． At P（N２）＝5％， the as-deposited film is amorphous， coercivity is large． After annealing， the film crystallizes， coercivity decreases greatly， and the ratio of crystalline is 40％ after annealing at 400℃． At last， the influence of sputtering power and total pressure is researched． It is found that the magnetic properties are not sensitive to them． It indicated that the film is an optimum head material for industry．