Bulk Nanostructured Thermoelectric Materials: Preparation,Structure and Properties |
| |
Authors: | Tie-Jun Zhu Yi-Qi Cao Qian Zhang Xin-Bing Zhao |
| |
Affiliation: | (1) Electrical and Computer Engineering, Michigan State University, East Lansing, MI 48824, USA;(2) Chemistry, Michigan State University, East Lansing, MI 48824, USA;(3) Chemistry, Northwestern University, Evanston, IL 60208, USA;(4) Physics and Astronomy, Michigan State University, East Lansing, MI 48824, USA;(5) Mechanical Engineering, Michigan State University, East Lansing, MI 48824, USA;(6) Chemical Engineering and Materials Science, Michigan State University, East Lansing, MI 48824, USA |
| |
Abstract: | Bulk nanostructured materials have recently emerged as a new paradigm for improving the performance of existing thermoelectric materials. Here, we fabricated two kinds of bulk nanostructured thermoelectric materials by a bottom-up strategy and an in situ precipitation method, respectively. Binary PbTe was fabricated by a combination of chemical synthesis and hot pressing. The grain sizes of the hot pressed bulk samples varied from 200 nm to 400 nm, which significantly contributed to the reduction of thermal conductivity due to the enhanced boundary phonon scattering. The highest figure of merit ZT of the binary PbTe sample reached 0.8 at 580 K. Mg2(Si,Sn) solid solutions have shown great promise for thermoelectric application, due to good thermoelectric properties, non-toxicity, and abundantly available constituent elements. The nanoscale microstructure observation of the compounds showed the existence of nanophases formed in situ, which is believed to be related to the relatively low lattice thermal conductivity in this material system. The highest ZT of Sb-doped Mg2(Si,Sn) samples reached 1.1 at 770 K. |
| |
Keywords: | |
本文献已被 SpringerLink 等数据库收录! |
|