SOI MOSFET的失真行为

采用幂级数方法对基于全耗尽(FD)SOI MOSFET和凹陷(RC)沟道SOI MOSFET的失真行为进行了研究，发现随着沟道长度的减小失真行为变坏，且RC SOI器件较FD器件具有更好的失真行为．同时，从实验数据可以看出，不理想的体接触会由于体分布电阻的增加而使失真行为变坏．该结果可以为低失真混合信号集成系统的设计提高指导方向．

Distortion Behavior for SOI MOSFET

Distortion analysis of SOI MOS transistor is presented.By the power series method,the distortion behaviors of FD (fully depleted) and RC (recessed channel) SOI MOS transistor configurations are investigated.It is shown that the distortion figures deteriorate with the scaling down of channel length,and the RC SOI device shows better distortion performance than the FD SOI device.At the same time,the experimental data show that the ineffective body contact can lead to an increase of the harmonic amplitude due to the bulk resistance.The presented results give an intuitive knowledge for the design of low distortion mixed signal integrated system.