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Interface quality of SiGe oxide prepared by RF plasma anodisation |
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| Authors: | Goh IS Hall S Eccleston W Zhang JF Werner K |
| Affiliation: | Dept. of Electr. Eng. & Electron., Liverpool Univ.; |
| Abstract: | The latest progress in RF plasma anodisation of SiGe alloys at 80°C is reported. Compared with the authors' previous results, considerable improvement in interfacial quality has been achieved. However, unlike the thermally grown samples. No negative fixed oxide charges were found |
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