| 负电子亲和势氮化镓光电阴极 |
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| 引用本文： | 李慧蕊,申屠军,戴丽英,马建一.负电子亲和势氮化镓光电阴极[J].光电子技术,2007,27(2):73-77. |
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| 作者姓名： | 李慧蕊 申屠军 戴丽英 马建一 |
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| 作者单位： | 中国电子科技集团公司第五十五研究所,南京,210016 |
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| 摘 要： | 负电子亲和势GaN光电阴极在紫外探测技术领域具有诱人的应用前景.本文在介绍和分析负电子亲和势GaN光电阴极的特点、工作原理及其能带结构的基础上,设计了GaN外延材料的结构和阴极制作工艺.指出负电子亲和势GaN光电阴极制备的关键在于材料的生长、与输入光窗的融焊、衬底的减薄及彻底的去气处理和超高真空状态下的铯、氧激活.
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| 关 键 词： | 超高真空 激活 负电子亲和势 GaN光电阴极 紫外敏感 光电探测 |
| 文章编号： | 1005-488X（2007）02-0073-05 |
| 修稿时间： | 2007-03-30 |
GaN Based Negative Electron Affinity Photocathode |
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| LI Hui-rui,SHEN-Tu jun,DAI Li-ying,MA Jian-yi.GaN Based Negative Electron Affinity Photocathode[J].Optoelectronic Technology,2007,27(2):73-77. |
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| Authors: | LI Hui-rui SHEN-Tu jun DAI Li-ying MA Jian-yi |
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| Affiliation: | The 55th Research Institute of China Electronic Technology Group Corporation, Nanjing , 210016, CHN |
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| Abstract: | GaN based negative electron affinity(NEA) photocathodes show extensive prospect in ultraviolet signal detection.We describe here the principle of GaN based negative electron affinity photocathode and analyze its energy band structure.Construction of GaN material and technique for photocathode processing are then designed.It is also shown that the key points for GaN based NEA photocathode processing are material growth,vacuum processing and Cs(O) activation. |
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| Keywords: | ultra high vacuum activation negative electron affinity GaN photocathode ultraviolet sensitive photo detection |
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