一种碳化硅器件三电平电路的损耗计算方法

三电平电路较之两电平电路,斩波频率高,谐波小,有利于滤波器的优化设计,以及能更好地用于高速电机的驱动.三电平电路中开关器件的损耗是影响逆变器性能的主要因素,而传统的IGBT损耗计算方法不适用于SiC MOSFET,且常用的物理模型方法计算量较大,因此,为了精确且简便地计算分析开关器件的损耗,通过平均值法和SiC器件的损...

Loss calculation method for Three-Level circuit based on Silicon Carbide device

Compared with Two-Level circuit, Three-Level circuit has higher chopper frequency and lower harmonic, which is beneficial to the optimal design of the filter and can be better used to drive the high-speed motor. The loss of switching device in Three-Level circuit is the main factor that affects the performance of inverter, however, the loss calculation method of IGBT is not applicable to SiC MOSFET, and physical model method requires a large amount of calculation. Therefore, in order to accurately and easily calculate the loss of the switching device, the loss relationship between the three-level I-type and T-type topologies is studied by the average method and the loss parameters of the SiC device. Finally, the simulation experiment is carried out by using PLECS software. The experimental results are consistent with the above calculation results, and the feasibility of the loss calculation method is verified.