Reduction of electrical damage in specimens prepared using focused ion beam milling for dopant profiling using off-axis electron holography |
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Authors: | Cooper David Truche Robert Rouviere Jean-Luc |
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Affiliation: | CEA LETI - Minatec, Grenoble, Cedex 9, France. david.cooper@cea.fr |
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Abstract: | GaAs specimens containing p-n junctions have been prepared using focused ion beam (FIB) milling for examination using off-axis electron holography. By lowering the FIB operating voltage from 30 to 8 kV, we have shown a systematic reduction of the electrically 'inactive' thickness from 220 to 100 nm, resulting in a significant increase in the step in phase measured across the junctions as well as an improvement in the signal-to-noise ratio. We also show that the step in phase measured across the junctions can be influenced by the intensity of the electron beam. |
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Keywords: | 85.30.De |
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