光伏型硅X射线探测器

介绍了垂直多结器件的结构,给出了热迁移制结的工艺条件和结果,特别介绍了处理器件电极引线的隔离线方法,解决了经过热迁移掺杂后光刻电极套不准的难题,以及把所有p型区域连接起来的问题,达到了敏感区金属零遮挡的目的.同时分析了工艺条件对器件性能的影响.通过对敏感区和无效区的计算和对比,对器件的几个电流参数进行了详细的计算;对两种靶材的标识谱在器件内产生的光电子的收集效率做了计算,对器件的光谱响应度也作了计算和分析;同时对器件窗口材料的选择进行了详细讨论;最后叙述对器件进行的实验验证,通过对金属模板上模拟缺陷的测量,证明器件有足够的灵敏度和分辨率.

A Photovoltaic Si X-Ray Detector

The structure of a vertical multijunction detector is presented.The workmanship conditions and results of thermomigration are presented.The insulation line method of disposing electrode wire is introduced,and the problem of photoetching an electrode after thermomigration is solved.Additionally,the effects of the workmanship conditions on device performance are analyzed.Through contrasting the sensitivity region and the inefficacy region,several current parameters of the vertical multijunction detector are calculated.In particular,the efficiency of collecting photoelectrons excited in the device for two X-ray marker spectra that come from two targets is calculated.The spectrum responsivity of the device is calculated and discussed,and the selection of window material of the device is discussed.Finally,through measuring the simulation defects in the metal mouldboard,the device is proved to have sufficient responsivity and distinguishability.