Numerical study of self-heating effects of MOSFETs fabricated on SOAN substrate |
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Authors: | Ming Zhu Peng Chen Fu RK-Y Zhenghua An Chenglu Lin Chu PK |
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Affiliation: | Dept. of Phys. & Mater. Sci., City Univ. of Hong Kong, Shanghai, China; |
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Abstract: | A two-dimensional numerical analysis is performed to investigate the self-heating effects of metal-oxide-silicon field-effect transistors (MOSFETs) fabricated in silicon-on-aluminum nitride (SOAN) substrate. The electrical characteristics and temperature distribution are simulated and compared to those of bulk and standard silicon-on-insulator (SOI) MOSFETs. The SOAN devices are shown to have good leakage and subthreshold characteristics. Furthermore, the channel temperature and negative differential resistance are reduced during high-temperature operation, suggesting that SOAN can mitigate the self-heating penalty effectively. Our study suggests that AlN is a suitable alternative to silicon dioxide as the buried dielectric in SOI, and expands the applications of SOI to high temperature. |
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