Special features of the sublimational molecular-beam epitaxy of Si and its potentialities for growing Si:Er/Si structures |
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Authors: | V. P. Kuznetsov R. A. Rubtsova |
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Affiliation: | (1) Physicotechnical Research Institute, Nizhni Novgorod State University, Nizhni Novgorod, 603600, Russia |
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Abstract: | The concentration of charge carriers and their Hall mobility in Si:Er/Si layers grown by sublimational molecular-beam epitaxy were investigated as functions of temperature in the range of 300–77 K. No electric activity of Er-containing luminescent centers was observed. The feasibility of precise control over impurity profiles in growing the p +-n-n + electroluminescent structures is demonstrated. |
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