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Effects of annealing conditions on the properties of TiO2/ITO-based photoanode and the photovoltaic performance of dye-sensitized solar cells
Authors:Chih-Ming Chen  Yu-Chun HsuSheng-Jye Cherng
Affiliation:Department of Chemical Engineering, National Chung Hsing University, Taichung 402, Taiwan
Abstract:Photovoltaic performance of dye-sensitized solar cell (DSSC) is enhanced by a two-step annealing process of the photoanode. The 1st-step of annealing is performed in oxygen at 450 °C for 30 min which effectively removes the residual organics originated from the TiO2 precursor pastes. This enhances the dye adsorption on the TiO2 nanoparticles and raises the short-circuit current density (JSC). The 2nd-step of annealing is performed in nitrogen at 450 °C for 10 min which removes extra oxygen atoms resulted from the incorporation of oxygen atoms into the tin-doped indium oxide (ITO) film during the 1st-step of annealing. This reduces the sheet resistance of ITO and thereby enhances the fill factor (FF). With the enhanced JSC of 15.9mAcm−2 and FF of 0.65, the AM1.5 solar to electric conversion efficiency (η) of DSSC reaches 6.7% which is better than that based on the conventional one-step air annealing (η = 5.53%, JSC = 14.08 mA cm−2, FF = 0.6).
Keywords:Electrode materials   Semiconductors   Photoconductivity and photovoltaics   Annealing
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