| Organic light-emitting devices based on new rare earth complex Tb（p-CIBA）3phen |
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| 作者姓名： | CHEN Zheng DENG Zhen-bo SHI Yu-meng XU Deng-hui GUO Dong HAO Jin-gang WANG Rui-fen |
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| 作者单位： | [1]Key Laboratory of Luminescence and Optical Information, Ministry of Beijing Jiaotong University, Beijing 100044, China [2]Department of Chemistry, Hebei Normal University, Shijiazhuang 050091, China |
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| 基金项目： | Supported by National Natural Science Foundation of China （90 201004）, Beijing Science and Technology Foundation （H0304300 20410） and Hebei proviee Natural Science Foundation （203148）. |
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| 摘 要： | A new rare earth complex Tb（p-CIBA）3phen was synthesized and introduced into organic tight emitting devices （OLEDs） as emitting material. The Tb（p-CIBA）3phen was doped into PVK to improve the filmforming and hole-transporting property. Two kinds of devices were fabricated. The device structure is as the following. Single-layer device： ITO/PVK： Tb （p-CIBA） 3 phen /LiF/Al; double-layer device： ITO/PVK： Tb（p-CIBA）3phen/AIQ/LiF/AI. The performances of both devices were investigated carefully. We found that the emission of PVK was completely restrained,and only the green emission was observed from the electroluminescence. The full width at half maximum （FWHM） was less than 10 nm. The highest EL brighthess of the single-layer device is 25.4 cd/cm^2 at a fixed bias of 18 V,and the highest EL brightness of the double-layer device reaches 234.8 cd/cm^2 at a voltage of 20 V.
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| 关 键 词： | 功能发光器件 发光材料 亮度 电致发光 |
| 文章编号： | 1673-1905（2006）06-0403-03 |
| 收稿时间： | 2006-04-11 |
Organic light-emitting devices based on new rare earth complex Tb(p-CIBA)3phen |
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| CHEN Zheng DENG Zhen-bo SHI Yu-meng XU Deng-hui GUO Dong HAO Jin-gang WANG Rui-fen.Organic light-emitting devices based on new rare earth complex Tb(p-CIBA)3phen[J].Opto-electronics Letters,2006,2(6):403-405. |
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| Authors: | Zheng Chen Zhen-bo Deng Yu-meng Shi Deng-hui Xu Dong Guo Jin-gang Hao and Rui-fen Wang |
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| Affiliation: | (1) Key Laboratory of Luminescence and Optical Information, Ministry of Education, Institute of Optoelectronic Technology, Beijing Jiaotong University, 100044 Beijing, China;(2) Department of Chemistry, Hebei Normal University, 050091 Shijiazhuang, China |
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| Abstract: | A new rare earth complex Tb(p-CIBA)3phen was synthesized and introduced into organic light emitting devices (OLEDs) as emitting material. The Tb(p-CIBA)3phen was doped into PVK to improve the film-forming and hole-transporting property. Two kinds of devices were fabricated.
The device structure is as the following. Single-layer device: ITO/PVK: Tb(p-CIBA)3phen/LiF/Al; double-layer device: ITO/PVK: Tb(p-CIBA)3phen/AIQ/LiF/Al. The performances of both devices were investigated carefully. We found that the emission of PVK was completely
restrained, and only the green emission was observed from the electroluminescence. The full width at half maximum (FWHM) was
less than 10 nm. The highest EL brightness of the single-layer device is 25.4 cd/cm2 at a fixed bias of 18 V, and the highest EL brightness of the double-layer device reaches 234.8 cd/cm2 at a voltage of 20 V.
Supported by National Natural Science Foundation of China (90 201004), Beijing Science and Technology Foundation (H0304300
20410) and Hebei provice Natural Science Foundation (203148). |
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| Keywords: | CLC number" target="_blank">CLC number TN383 |
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