| GaN基绿光激光器 |
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| 引用本文： | 江灵荣,刘建平,田爱琴,程洋,李增成,张立群,张书明,李德尧,M.Ike,杨辉.GaN基绿光激光器[J].半导体学报,2016,37(11):111001-10. |
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| 作者姓名： | 江灵荣 刘建平 田爱琴 程洋 李增成 张立群 张书明 李德尧 M.Ike 杨辉 |
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| 基金项目： | Project supported by the National Key Research and Development Progress of China;the National Natural Science Foundation of China;the Strategic Priority Research Program of the Chinese Academy of Science;and the Science and Technology Support Project of Jiangsu Province |
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| 摘 要： | 近期许多研究机构都致力于开发GaN基绿光激光器来满足激光显示技术对其的需求。过去的几年中，进步与挑战并存。在本文中，首先我们分析了开发GaN基绿光激光器所面临的困难，其次综述了提高绿光激光器的晶体质量、电学特性以及外延结构等的方法，并着重介绍了我们的工作。
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| 关 键 词： | green LDs InGaN QCSE In-rich |
GaN-based green laser diodes |
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| Jiang Lingrong,Liu Jianping,Tian Aiqin,Cheng Yang,Li Zengcheng,Zhang Liqun,Zhang Shuming.GaN-based green laser diodes[J].Chinese Journal of Semiconductors,2016,37(11):111001-10. |
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| Authors: | Jiang Lingrong Liu Jianping Tian Aiqin Cheng Yang Li Zengcheng Zhang Liqun Zhang Shuming |
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| Affiliation: | Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China;Key Laboratory of Nano-Devices and Applications, Chinese Academy of Sciences, Suzhou 215123, China |
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| Abstract: | Recently, many groups have focused on the development of GaN-based green LDs to meet the demand for laser display. Great progresses have been achieved in the past few years even that many challenges exist. In this article, we analysis the challenges to develop GaN-based green LDs, and then the approaches to improve the green LD structure in the aspect of crystalline quality, electrical properties, and epitaxial layer structure are reviewed, especially the work we have done. |
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| Keywords: | green LDs InGaN QCSE In-rich |
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