Optimizing back surface field for improving Voc of(Al)GaInP solar cell |
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Authors: | Lu Hongbo Li Xinyi Zhang Wei Zhou Dayong Sun Lijie Chen Kaijian |
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Affiliation: | State Key Laboratory of Space Power Technology, Shanghai Institute of Space Power-Source, Shanghai 200245, China |
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Abstract: | GaInP and AlGaInP solar cells were grown by metal organic chemical vapor deposition (MOCVD), and theoretical analysis demonstrated that hetero-interface recombination velocity plays an important role in the optimizing of cell performance, especially the interface between base layer and back surface field (BSF). Measurements including lattice-matched growth and pseudo-BSF were taken to optimize BSF design. Significant improvement of Voc in GaInP and AlGaInP solar cells imply that the measures we took are effective and promising for performance improvement in the next generation high efficiency solar cells. |
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Keywords: | back surface field GaInP solar cells MOCVD |
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