| 一种用于高压电平位移电路结构的准三维模拟方法 |
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| 引用本文： | 刘继芝,陈星弼. 一种用于高压电平位移电路结构的准三维模拟方法[J]. 半导体学报, 2009, 30(12): 125001-6 |
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| 作者姓名： | 刘继芝 陈星弼 |
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| 摘 要： | A new quasi-three-dimensional （quasi-3D） numeric simulation method for a high-voltage level-shifting circuit structure is proposed. The performances of the 3D structure are analyzed by combining some 2D device structures; the 2D devices are in two planes perpendicular to each other and to the surface of the semiconductor. In comparison with Davinci, the full 3D device simulation tool, the quasi-3D simulation method can give results for the potential and current distribution of the 3D high-voltage level-shifting circuit structure with appropriate accuracy and the total CPU time for simulation is significantly reduced. The quasi-3D simulation technique can be used in many cases with advantages such as saving computing time, making no demands on the high-end computer terminals, and being easy to operate.
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| 关 键 词： | 数值模拟方法 电路结构 准三维 三维仿真技术 高压 器件结构 半导体表面 CPU时间 |
| 收稿时间： | 2009-06-02 |
| 修稿时间： | 2009-07-07 |
A quasi-3-dimensional simulation method for a high-voltage level-shifting circuit structure |
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| Liu Jizhi and Chen Xingbi. A quasi-3-dimensional simulation method for a high-voltage level-shifting circuit structure[J]. Chinese Journal of Semiconductors, 2009, 30(12): 125001-6 |
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| Authors: | Liu Jizhi and Chen Xingbi |
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| Affiliation: | State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China |
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| Abstract: | A new quasi-three-dimensional (quasi-3D) numeric simulation method for a high-voltage level-shifting circuit structure is proposed. The performances of the 3D structure are analyzed by combining some 2D device structures; the 2D devices are in two planes perpendicular to each other and to the surface of the semiconductor. In comparison with Davinci, the full 3D device simulation tool, the quasi-3D simulation method can give results for the potential and current distribution of the 3D high-voltage level-shifting circuit structure with appropriate accuracy and the total CPU time for simulation is significantly reduced. The quasi-3D simulation technique can be used in many cases with advantages such as saving computing time, making no demands on the high-end computer terminals, and being easy to operate. |
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| Keywords: | quasi-3D 3D device simulation high-voltage level-shifting |
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