Monolithic integration of low-threshold-current 1.3 ?m GaInAsP/InP DFB lasers |
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| Authors: | Hirayama Y Kinoshita J Furuyama H Uematsu Y |
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| Affiliation: | Toshiba Corporation, Research & Development Center, Kawasaki, Japan; |
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| Abstract: | Two 1.3 ?m GaInAsP/InP DFB lasers with low threshold currents (28 and 29 mA) were successfully integrated. Both DFB lasers operated continuously at temperatures of up to 68°C. The 12 ? separation in wavelength between the two lasers was produced by a 2 ? difference of the grating periods. A thermal interaction between the two lasers was estimated from the shift in their wavelengths. |
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