| MOCVD生长AlGaN/GaN/Si(111)异质结材料 |
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| 引用本文： | 李忠辉,李亮,董逊,李赟,张岚,许晓军,姜文海,陈辰. MOCVD生长AlGaN/GaN/Si(111)异质结材料[J]. 固体电子学研究与进展, 2009, 29(4) |
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| 作者姓名： | 李忠辉 李亮 董逊 李赟 张岚 许晓军 姜文海 陈辰 |
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| 作者单位： | 单片集成电路与模块国家级重点实验室,南京电子器件研究所,南京,210016 |
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| 基金项目： | 江苏省自然科学基金资助项目，国家自然科学基金资助项目 |
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| 摘 要： | 利用MOCVD在Si(111)衬底上生长了无裂纹的GaN外延薄膜和AlGaN/GaN异质结构。通过优化Si衬底的浸润处理时间、AlN层厚度等参数获得了无裂纹的GaN外延薄膜,研究了SiN缓冲层和插入层厚度对AlGaN/GaN异质结电学性质的影响,2DEG的迁移率和面密度分别达到1410cm2/V.s和1.16×1013cm-2。
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| 关 键 词： | 氮化镓 高电子迁移率晶体管 二维电子气 |
AlGaN/GaN Heterostructure on Si(111) Substrate Grown by MOCVD |
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| LI Zhonghui,LI Liang,DONG Xun,LI Yun,ZHANG Lan,XU Xiaojun,JIANG Wenhai,CHEN Chen. AlGaN/GaN Heterostructure on Si(111) Substrate Grown by MOCVD[J]. Research & Progress of Solid State Electronics, 2009, 29(4) |
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| Authors: | LI Zhonghui LI Liang DONG Xun LI Yun ZHANG Lan XU Xiaojun JIANG Wenhai CHEN Chen |
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| Abstract: | Free-crack GaN and AlGaN/GaN heterostructure on Si substrates were grown by MOCVD. The SiN buffer layer can improve crystalline quality and electric characteristics of AlGaN/GaN heterostructure. The two-dimension electron gas (2DEG) mobility and sheet charge density achieved around 1 410 cm~2/V·s and 1.16×10~(13) cm~(-2) at room temperature, respectively, Structural and electrical properties determined by XRD and van der Pauw Hall method were presented. |
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| Keywords: | GaN HEMT two-dimention electronic gas |
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