Determination of interface trap capture cross sections usingthree-level charge pumping |
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Authors: | Saks N.S. Ancona M.G. |
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Affiliation: | US Naval Res. Lab., Washington, DC; |
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Abstract: | A modified three-voltage-level charge pumping (CP) technique is described for measuring interface trap parameters in MOSFETs. Charge pumping (CP) is a technique for studying traps at the Si-SiO2 interface in MOS transistors. In the CP technique, a pulse is applied to the gate of the MOSFET which alternately fills the traps with electrons and holes, thereby causing a recombination current Icp to flow in the substrate. With this technique, interface trap capture cross sections for both electrons and holes may be determined as a function of trap energy in a single device. It is demonstrated that a modified three-level charge pumping method may be used to determine not only interface trap densities but also to capture cross sections as a function of trap energy. The trap parameters are obtained for both electrons and holes using a single MOSFET |
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