| ZnO/(Ni)薄膜的制备与发光性能的研究 |
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| 引用本文： | 高飞,吴再华,刘晓艳.ZnO/(Ni)薄膜的制备与发光性能的研究[J].半导体技术,2008,33(8). |
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| 作者姓名： | 高飞 吴再华 刘晓艳 |
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| 作者单位： | 湖南信患职业技术学院,长沙,410200;中南大学材料科学与工程学院,长沙,410083 |
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| 摘 要： | 采用直流磁控溅射法制备了ZnO/(Ni)薄膜.研究了氧分压及Ni掺杂对ZnO薄膜的结构、光致发光特性及薄膜中的几种本征缺陷如氧空位(VO)、锌空位(VZn)、氧位锌(OZn)、锌位氧(ZnO)、间隙氧(Oi)、间隙锌(Zni)等浓度变化的影响.实验结果表明,随着氧分压的增大,466nm处的蓝色发光峰增强,掺Ni后蓝色发光峰也增强.通过分析,推测出蓝色发光峰可能是由ZnO薄膜中的间隙锌(Zni)点缺陷引起的.
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| 关 键 词： | ZnO薄膜 光致发光 间隙锌 Ni掺杂 |
Preparation of ZnO/(Ni) Thin Film and Studies on Its Photoluminescence Properties |
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| Gao Fei,Wu Zaihua,Liu Xiaoyan.Preparation of ZnO/(Ni) Thin Film and Studies on Its Photoluminescence Properties[J].Semiconductor Technology,2008,33(8). |
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| Authors: | Gao Fei Wu Zaihua Liu Xiaoyan |
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| Affiliation: | Gao Fei1,Wu Zaihua1,Liu Xiaoyan2(1. Hunan College of Information,Changsha 410200,China,2. School of Material Science , Engineering,Central South University,Changsha 410083,China) |
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| Abstract: | ZnO/(Ni) thin films were prepared by DC reactive magnetron sputtering. The effects of oxygen partial pressures and Ni doped on the microstructure,photoluminescence properties and the concentration of some intrinsic defects in ZnO thin films such as oxygen vacancy(VO), zinc vacancy(VZn), antisite oxygen(OZn), antisite zinc(ZnO), interstitial oxygen(Oi) and interstitial zinc(Zni) were studied respectively. Experimental results show that the intensity of the blue photoluminescence peak at 466 nm increases with... |
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| Keywords: | ZnO thin films photoluminescence (PL) interstitial zinc(Zni) Ni doped |
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