ZnSe/GaAs/Ge Triple Junction Solar Cell and Its Structure Design |
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Authors: | Aikun WANG Guochang LI Guoxiang ZHOU Jertrude F.Neumark |
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Affiliation: | School of Materials Science and Engineering, Hebei University of Technology, Tianjin 300130, China |
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Abstract: | A new method is given to increase doping concentration of p-type ZnSe up to 1× 10i8 cm-3 through adding a little Te. This method gets over the difficulty of the high doping concentration of p-type ZnSe for many years. The external quantum efficiency (QE) of ZnSe p-n junction solar cell has been measured, and ZnSe is a good material of the top cell in the tandem solar cells. The solar cells made from ZnSe/GaAs/Ge can cover 94% of the total solar spectrum under AM (air mass) 1.5, and their theoretical efficiency is 56%. |
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Keywords: | ZnSe top cell External quantum efficiency Uneven doping semiconductor |
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