|
|||||
|
|
| HgCdTe MIS器件制备及其C-V特性研究 | |
| 引用本文： | 张朝阳, 蔡毅, 张鹏翔. HgCdTe MIS器件制备及其C-V特性研究[J]. 红外技术, 2002, 24(5): 42-45. DOI: 10.3969/j.issn.1001-8891.2002.05.011 |
| 作者姓名： | 张朝阳 蔡毅 张鹏翔 |
| 作者单位： | 1. 昆明理工大学材料系,昆明,650051;昆明物理研究所,昆明,650223 2. 昆明物理研究所,昆明,650223 3. 昆明理工大学材料系,昆明,650051 |
| 摘 要： | 通过在P-HgCdTe上生长阳极硫化膜和ZnS介质钝化层,制备出了性能较好的MIS器件,并通过对MIS器件C-V特性的分析,获得了ZnS/自身钝化膜/P-HgCdTe的界面特性.所测的界面电荷密度在1010～1011cm-2之间,平带电压在2 V以下. |
| 关 键 词： | HgCdTe MIS器件 C-V特性 ZnS |
| 文章编号： | 1001-8891(2002)05-0042-04 |
The Manufacture of HgCdTe MIS Device and Its C-V Character |
|
| The Manufacture of HgCdTe MIS Device and Its C-V Character[J]. Infrared Technology , 2002, 24(5): 42-45. DOI: 10.3969/j.issn.1001-8891.2002.05.011 | |
| Authors: | ZHANG Chao yang CAI Yi ZHANG Peng xiang |
| Affiliation: | ZHANG Chao yang 1,2,CAI Yi 2,ZHANG Peng xiang 1 |
| Abstract: | In this study ,We report the growth of the sulfide film and the ZnS film on the top of P HgCdTe and achieved a better HgCdTe MIS device. The C V characterization of the MIS device also was investigated. From the result of the C V character analysis, We arrived the character of the interface of ZnS/sulfide/P HgCdTe, The interface charge concentration was between 10 10 and 10 11 /cm 2, and VFB was below 2 V. |
| Keywords: | HgCdTe MIS device C V (Capacitance Voltage) ZnS |
| 本文献已被 CNKI 维普 万方数据 等数据库收录！ | |
| 点击此处可从《红外技术》浏览原始摘要信息 | |
| 点击此处可从《红外技术》下载全文 | |