A novel process to form cobalt silicided p+ poly-Sigates by BF2+ implantation into bilayeredCoSi/a-Si films and subsequent anneal |
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| Authors: | Lai WK Liu HW Juang MH Chen NC Cheng HC |
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| Affiliation: | Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu; |
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| Abstract: | A novel process that implants BF2+ ions into thin bilayered CoSi/a-Si films has been shown to form cobalt silicided p + poly-Si gates with excellent gate oxide integrity and very small flatband shift. The effects of not only using the CoSi layer as an implantation barrier but also keeping the a-Si underlayer during the initial silicide formation both significantly suppress the boron penetration through thin gate oxide |
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