| 电路级热载流子效应仿真研究 |
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| 引用本文： | 高国平,曹燕杰,周晓彬,陈菊.电路级热载流子效应仿真研究[J].电子与封装,2014(4):42-44. |
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| 作者姓名： | 高国平 曹燕杰 周晓彬 陈菊 |
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| 作者单位： | 中国电子科技集团公司第58研究所,江苏无锡214035 |
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| 摘 要： | 随着集成电路制造工艺的不断进步,沟道长度、结深、栅氧厚度等特征尺寸不断减小,而电路的电源电压没有按比例减小,易造成MOSFET的电流-电压特性退化,需要提前在设计阶段加以考虑。对电路长期可靠性问题中的热载流子效应(HCI)进行了仿真研究。
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| 关 键 词： | 热载流子效应 MOSFET IC |
Circuit-level Lifetime Simulation Based on HCI |
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| GAO Guoping,CAO Yanjie,ZHOU Xiaobin,CHEN Ju.Circuit-level Lifetime Simulation Based on HCI[J].Electronics & Packaging,2014(4):42-44. |
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| Authors: | GAO Guoping CAO Yanjie ZHOU Xiaobin CHEN Ju |
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| Affiliation: | (China Electronics Technology Group Corporation No.58 Research Institute, Wuxi 214035, China) |
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| Abstract: | As VLSI fabrication technologies move into the deep submicron regime, feature size such as the channel length, the junction depth and the gate oxide thickness, is reducing without proportional scaling of the power supply voltage. This degrades the current-voltage characteristics of the MOSFET. The paper presents a investagation of circuit-level HCI simulation. |
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| Keywords: | HCI MOSFET IC |
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